Sic Mosfet Gate Driver Design

Wolfspeed s cgd15sg00d2 is a gate driver board specifically designed to support 900v and 1200v 3rd generation sic mosfets with high creepage 9mm clearance.

Sic mosfet gate driver design.

Sic mosfet gate drive design considerations abstract. While this e book goes into further detail you can jump into the most relevant topics for your design at the right. The 6 mω module has dual gate source pins and dual power drain and source connection points to reduce inductance and improve current sharing amongst the sic mosfet chips internal to the module. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides 15v and 4v output voltage and 1w output power.

The reference design provides customers with a highly isolated sic mosfet dual gate driver switch to provide a means for evaluating sic mosfets in a number of topologies. Igbt sic gate driver fundamentals. What is a power mosfet gate driver. This includes modes optimized for half bridge switching with synchronous dead time protection and asynchronous signal transfer with no protection.

Gate driver circuit. Discover solutions to some of the most commonly asked igbt and sic gate driver questions. In an application note about fine tuning sic mosfet gate drivers stmicroelectronics recommends making rgon at least 1 5 times rgoff with resistance values of about 4 7ω and 2 2ω respectively. The purpose of this paper is to provide guidance on how to design gate driver circuits for silicon carbide sic mosfets.

There are new commercially available sic mosfets available in discrete and module packages which are much faster and more efficient than their traditional igbt counterparts. Get to know paralleling igbt power modules with sic mosfets can be exacerbated due to the much faster device switching speeds motivation behind paralleling sic mosfet modules key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses. Mscsicmdd ref1 dual sic mosfet driver reference design an1824 application note revision 1 1 3 the sic mosfets are normally driven at higher asymmetrical gate voltages when compared to silicon mosfets. Typically they are driven at 5 v to 20 v.

Lower positive voltages can be used if the resulting higher r is acceptable. This reference design is an automotive qualified isolated gate driver solution for driving silicon carbide sic mosfets in half bridge configuration.